Manufacturing method of semiconductor structure and semiconductor structure

The invention provides a manufacturing method of a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors, and the manufacturing method of the semiconductor structure comprises the steps: providing a substrate; forming an interface layer; forming a high-K dielectric layer; performing first process treatment to enable the surface layer of the top surface of the high-K dielectric layer to have a first element; forming a work function adjusting layer on the high-K dielectric layer, wherein the material of the work function adjusting layer comprises adjusting elements; and carrying out second process processing, driving the adjusting elements in the work function adjusting layer to diffuse towards the interface layer and to be accumulated on the contact interface of the high-K dielectric layer and the interface layer so as to form a dipole layer, and driving the first element to diffuse from the top surface layer of the high-K dielectric layer to the interior