Manufacturing method of semiconductor element

A method of fabricating a semiconductor device includes the following steps. A fin is formed on the substrate. A gate is formed across the fin. An interlayer dielectric layer is formed to cover the gate. Etching the interlayer dielectric layer to form an opening in the interlayer dielectric layer, wherein the gate is exposed through the opening; chemical vapor deposition is performed using a fluorine-free precursor to form a gate contact in the opening, where the gate contact includes tungsten. 一种制作半导体元件的方法包含以下步骤。形成鳍片于基材上。形成栅极横跨鳍片。形成层间介电层以覆盖栅极。蚀刻层间介电层以于层间介电层中形成开口，其中栅极透过开口暴露。使用无氟前驱物来执行化学气相沉积，以于开口中形成栅极接触，其中栅极接触包括钨。