Image sensor, manufacturing method thereof and photoetching mask

The invention provides an image sensor, a manufacturing method and a photoetching mask, and the image sensor comprises a first chip region which at least comprises a first sub-chip region and a second sub-chip region, the first sub-chip region is arranged along a first preset direction, and the second sub-chip region is different from the first sub-chip region; the first chip area is arranged along a first preset direction, the second chip area is arranged along a second preset direction relative to the first chip area, an included angle is formed between the first preset direction and the second preset direction, and the first chip area and the second chip area are identical in circuit arrangement. According to the method, the area array image sensor chip area is arranged, the pattern of one chip area is formed through at least one time of translation and at least two times of corresponding exposure, pattern splicing can be carried out during exposure, and a chip can be made to be longer and cannot be limite