Manufacturing method of IGBT device and IGBT device

The invention relates to a manufacturing method of an IGBT (Insulated Gate Bipolar Translator) device and the IGBT device, and the manufacturing method of the IGBT device comprises the following steps: providing a first wafer for manufacturing the IGBT device; performing an IGBT front surface process on the front surface of the first wafer so as to form a metal-oxide-semiconductor field effect transistor on the front surface of the first wafer; providing a second wafer; injecting hydrogen ions into the front surface of the second wafer to form a hydrogen-containing layer in the second wafer; oppositely bonding the front surface of the first wafer and the front surface of the second wafer together so as to connect the first wafer and the second wafer together to form a wafer combination; performing an IGBT back surface process on the back surface of the first wafer in the wafer combination; and breaking the second wafer at the hydrogen-containing layer through an annealing process so as to remove the part of t