Method for eliminating etching load effect

The invention provides a method for eliminating an etching load effect. The method comprises the following steps: etching and removing a first target region of a first etching region on a silicon dioxide layer; wherein the thickness of the first target area is smaller than that of the silicon dioxid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG ZHIHAN, ZHANG SHUAI, ZHANG LIANGGUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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