Method for eliminating etching load effect

The invention provides a method for eliminating an etching load effect. The method comprises the following steps: etching and removing a first target region of a first etching region on a silicon dioxide layer; wherein the thickness of the first target area is smaller than that of the silicon dioxide layer; coating a photosensitive material on the surface of the silicon dioxide layer, and performing exposure and development to expose a first target area of the first etching area and a second target area of the second etching area; and etching the residual silicon dioxide layer along the direction of the first target region, and etching the residual silicon dioxide layer along the direction of the second target region to obtain a target wafer. According to the invention, the second etching region is blocked through the primary mask, the first etching region is etched by a certain depth, and then all the regions are exposed for dry etching to avoid the influence of etching depth difference caused by a compensat