MIMC multilayer wiring method based on BCB

The invention is suitable for the technical field of integrated circuits, and provides a BCB-based MIMC multilayer wiring method. The method comprises the following steps: sequentially preparing an active device, a first medium protection layer and a first BCB layer on the surface of a wafer; a first metal layer is prepared on the first BCB layer, the first metal layer comprises a plurality of independent first metal areas, all the first metal areas make contact with electrodes of the active device, the electrodes, needing to be grounded, in the active device are interconnected, and other electrodes are independently led out; preparing a second dielectric protection layer and a second BCB layer on the first metal layer in sequence; sequentially preparing a second metal layer and a third BCB layer covering the second metal layer on the second BCB layer; and sequentially preparing a passive device, a third dielectric protection layer and a third metal layer on the upper surface of the third BCB layer. According