Laser sensing detection circuit

The embodiment of the invention provides a laser sensing detection circuit, relates to the technical field of chips, and can detect high-speed laser pulses, improve the FI attack defense capability of a chip, and reduce the detection cost and the occupied area of the chip at the same time. According...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHAO XIAOJIN, LUO HUAMIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The embodiment of the invention provides a laser sensing detection circuit, relates to the technical field of chips, and can detect high-speed laser pulses, improve the FI attack defense capability of a chip, and reduce the detection cost and the occupied area of the chip at the same time. According to the specific scheme, the laser sensing detection circuit comprises a laser detection circuit and a pulse capture circuit, the laser detection circuit comprises a photodiode, a first MOS transistor and a second MOS transistor, and a source electrode of the first MOS transistor and a drain electrode of the second MOS transistor are coupled to a first node. The grid electrode of the first MOS tube is used for inputting bias voltage, the drain electrode of the first MOS tube is used for inputting power supply voltage, the grid electrode of the second MOS tube is coupled with the first node, the source electrode of the second MOS tube is coupled with the n-doped end of the photodiode, and the first node is used for