EUV metal photoresist as well as preparation method and application thereof

The invention discloses an EUV (Extreme Ultraviolet) metal photoresist as well as a preparation method and application thereof. The photoresist composition provided by the invention comprises the following components: a compound A as shown in the following formula, ptycene B as shown in the followin...

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Hauptverfasser:	FANG SHUNONG, WANG SU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention discloses an EUV (Extreme Ultraviolet) metal photoresist as well as a preparation method and application thereof. The photoresist composition provided by the invention comprises the following components: a compound A as shown in the following formula, ptycene B as shown in the following formula, a photoacid generator, an organic solvent and organic alkali. The photoresist can be used for an EUV photoetching technology, has the characteristics of high resolution, high sensitivity and high photosensitivity, and has a wide application prospect. # imgabs0 # 本发明公开了一种EUV金属光刻胶及其制备方法和应用。本发明所提供的光刻胶组合物包含以下组分：如下式所示的化合物A、如下式所示的蝶烯B、光产酸剂、有机溶剂和有机碱。所述光刻胶可用于EUV光刻技术，具备高分辨率、高灵敏度和高光敏度的特点，有广泛的应用前景。#imgabs0#