EUV/EB photoresist as well as preparation method and application thereof

The invention provides an EUV/EB photoresist as well as a preparation method and application thereof. The photoresist composition comprises the following components: resin, a photoacid generator, a quenching agent and a solvent, wherein the sum of the mass fractions of the components is 100%. Accord...

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Hauptverfasser:	TANG CHEN, FANG SHUNONG, WANG SU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention provides an EUV/EB photoresist as well as a preparation method and application thereof. The photoresist composition comprises the following components: resin, a photoacid generator, a quenching agent and a solvent, wherein the sum of the mass fractions of the components is 100%. According to the photoresist disclosed by the invention, the resolution and the sensitivity are improved while the LER and the LWR are reduced. 本发明提供了一种EUV/EB光刻胶、其制备方法及应用。本发明的光刻胶组合物包括如下的组分：树脂、光生酸剂、淬灭剂和溶剂，各组分质量分数之和为100％。本发明的光刻胶在降低LER和LWR的同时，提高了解析度和灵敏度。