Wafer grinding control method, device, equipment and medium

The invention discloses a wafer grinding control method, device and equipment and a medium, and belongs to the technical field of electronic machinery. The method comprises the following steps: acquiring first thickness data of a target area, second thickness data of a non-target area and wafer property parameters, and determining a first acquisition range of thickness data of a first material; in the wafer fine grinding process, continuously collecting thickness data of the first material, obtaining a preset number of thickness data of the first material in the first collection range, and determining a median; acquiring the thickness data of the first material in real time during continuous wafer fine grinding, and continuously updating the minimum acquisition range of the thickness data of the first material; and if the thickness data of the first material is within the minimum acquisition range and reaches a fine grinding finishing standard value, finishing the wafer fine grinding process. According to the