Three-dimensional semiconductor memory device and electronic system including same

The invention discloses a three-dimensional semiconductor memory device and an electronic system. The three-dimensional semiconductor memory device includes: a first substrate including a cell array region and a contact region; a peripheral circuit structure on the first substrate; a cell array structure on the peripheral circuit structure, where the cell array structure includes interlayer dielectric layers and gate electrodes alternately stacked, a dielectric layer on the stacked structure, and a second substrate on the stacked structure; a molding structure penetrating the stack structure and including a dielectric material; and a first through structure and a second through structure penetrating the molded structure and spaced apart from each other. 公开了三维半导体存储器件和电子系统。三维半导体存储器件包括：第一衬底，包括单元阵列区和接触区；在第一衬底上的外围电路结构；在外围电路结构上的单元阵列结构，其中，单元阵列结构包括交替堆叠的层间介电层和栅电极、在堆叠结构上的介电层、以及在堆叠结构上的第二衬底；模制结构，贯穿堆叠结构并包括电介质材料；以及第一贯通结构和第二贯通结构，贯穿模制结构并且彼此间隔开。