Semiconductor element and manufacturing method thereof

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element mainly comprises the steps: providing a substrate comprising a resistance region, forming a first gate structure in the resistance region, forming a first interlayer dielectric layer around the first gate structure, and forming a second interlayer dielectric layer around the first gate structure; the first gate structure is converted into a first metal gate, and the first metal gate includes a gate electrode disposed on the substrate and a hard mask disposed on the gate electrode, and then a resistor is formed on the first metal gate. 本发明揭露一种半导体元件及其制作方法，其中该制作半导体元件的方法为，主要先提供一基底包含一电阻区，然后形成第一栅极结构于该电阻区，形成第一层间介电层环绕第一栅极结构，将该第一栅极结构转换为第一金属栅极且第一金属栅极包含一栅极电极设于基底上以及一硬掩模设于栅极电极上，之后再形成一电阻于第一金属栅极上。