Polycrystalline SiC molded body and method for producing same

The present invention addresses the problem of providing: a polycrystalline SiC molded body having a small crystal particle size but a small volume resistivity; and a method for producing the polycrystalline SiC molded body. Provided is a polycrystalline SiC molded body having an average crystal gra...

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Bibliographische Detailangaben
Hauptverfasser:	SHINDO HIROYUKI, YASHIKIDA, REIKO, USHIJIMA YUJI, OISHI SHOHEI, IIDA, TAKUSHI, TAKAHASHI IKUYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention addresses the problem of providing: a polycrystalline SiC molded body having a small crystal particle size but a small volume resistivity; and a method for producing the polycrystalline SiC molded body. Provided is a polycrystalline SiC molded body having an average crystal grain size of 5 [mu] m or less, a nitrogen concentration of 2.7 * 1019 to 5.4 * 1020 (cells/cm3), and a product of carrier density and Hall mobility of 4.0 * 1020 to 6.0 * 1021 (cells/cmVsec). 本发明的课题是提供虽然晶体粒径小但体积电阻率小的多晶SiC成型体及其制造方法。本发明提供平均晶体粒径为5μm以下，氮浓度为2.7×1019～5.4×1020(个/cm3)，载流子密度与霍尔迁移率的乘积为4.0×1020～6.0×1021(个/cmVsec)的多晶SiC成型体。