Sputtering device

This sputtering device (10) is provided with: a first target holder (111) and a second target holder (112) that hold a first target (T1) and a second target (T2), respectively, such that the surfaces of the first target (T1) and the second target (T2) face each other; a substrate holder (16) provide...

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Bibliographische Detailangaben
Hauptverfasser:	IKUHARA SHIRO, SATO KAZUO, IWASAKI SHINICHI, EBE, AKINORI, OGAWA KURAICHI, KAKEHI YOSHIHARU, KONDOU YUUSUKE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	This sputtering device (10) is provided with: a first target holder (111) and a second target holder (112) that hold a first target (T1) and a second target (T2), respectively, such that the surfaces of the first target (T1) and the second target (T2) face each other; a substrate holder (16) provided on the side of a plasma generation region (R), which is a region between the first target (T1) and the second target (T2) held by the first target holder (111) and the second target holder (112), respectively; a first main magnetic field generation unit (121) and a second main magnetic field generation unit (122) which are provided on the rear surface side of each of the first target holder (111) and the second target holder (112), in which magnets are disposed such that poles facing each other face each other, and which generate a first main magnetic field and a second main magnetic field on the surfaces of the first target (T1) and the second target (T2) held by each of the first target holder (111) and the sec