Semiconductor memory device

A semiconductor memory device includes: a semiconductor substrate; a peripheral circuit structure disposed on the semiconductor substrate; and a cell array structure on the peripheral circuit structure and including a memory cell array including a plurality of memory cells, in which each of the plur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE KISEOK, KU BYEONGJOO, KIM KEUNNAM
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A semiconductor memory device includes: a semiconductor substrate; a peripheral circuit structure disposed on the semiconductor substrate; and a cell array structure on the peripheral circuit structure and including a memory cell array including a plurality of memory cells, in which each of the plurality of memory cells of the cell array structure includes: a bit line extending in a first horizontal direction; a channel pattern including a horizontal channel portion on the bit line and a vertical channel portion vertically protruding from the horizontal channel portion; a first word line extending in a second horizontal direction crossing the first horizontal direction on the channel pattern; a first gate insulating pattern between the channel pattern and the first word line; a landing pad connected to a vertical channel portion of the channel pattern; and a data storage pattern disposed on the landing pad. 一种半导体存储器装置包括:半导体衬底;外围电路结构,其设置在半导体衬底上;以及单元阵列结构,其位于外围电路结构上并且包括存储器单元阵列,该存储器单元阵列包括多个存储器单元,其中,单元阵列结构的多个存储器单元