Preparation method of VCSEL device on epitaxial structure, epitaxial structure and VCSEL device

The invention discloses a preparation method of a VCSEL device on an epitaxial structure, the epitaxial structure and the VCSEL device. According to the preparation method of the VCSEL device on the epitaxial structure provided by the invention, inert gas including but not limited to argon is inject...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHI YUWEI, HE ZHENGHANG, LUO YITENG, ZHENG QINGMU, HUANG HONGDA, CHEN JIANGUANG, ZHONG GUANGZHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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