Preparation method of VCSEL device on epitaxial structure, epitaxial structure and VCSEL device

The invention discloses a preparation method of a VCSEL device on an epitaxial structure, the epitaxial structure and the VCSEL device. According to the preparation method of the VCSEL device on the epitaxial structure provided by the invention, inert gas including but not limited to argon is injected by using ion implanter equipment, the inert gas is ionized into an ion beam with positive electricity, the ion beam is accelerated to impact the surface of an injected object, and by controlling the current of the ion beam and the energy range of the ion beam, the surface of the injected object is improved. The injection dose, angle and depth are controlled, and the method has the advantage of small lateral expansion. According to the preparation method of the VCSEL device on the epitaxial structure provided by the invention, the aperture size of the light-emitting hole can be more accurately controlled, the light quantity of the VCSEL light-emitting hole can be consistent, variables of the process are greatly c