Compound semiconductor device and manufacturing method thereof

The invention discloses a compound semiconductor device and a manufacturing method thereof. The compound semiconductor device comprises a substrate; the channel layer is located on the substrate; the barrier layer is located on the channel layer; the passivation layer is located on the barrier layer; the contact region is recessed in the passivation layer and the barrier layer, and a part of the channel layer is exposed at the bottom of the contact region; the double-layer silicide film is positioned on the contact region; and a copper contact on the bi-layer silicide film. 本发明公开一种化合物半导体器件及其制作方法，其中该化合物半导体器件包含：基底；沟道层，位于所述基底上；阻障层，位于所述沟道层上；钝化层，位于所述阻障层上；接触区，凹入所述钝化层和所述阻障层中，其中，部分的所述沟道层被暴露在所述接触区的底部；双层硅化物膜，位于所述接触区上；以及铜接触，位于所述双层硅化物膜上。