SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes: a first layer structure; a second layer structure; a bridge die disposed between the first layer structure and the second layer structure; the first system single chip is arranged on the second layer structure; the second system single chip is arranged on the second layer structure; wherein the first system-on-chip and the second system-on-chip are electrically connected through the bridging crystal grain. According to the invention, the first system single chip and the second system single chip can be electrically connected through the bridging crystal grain, so that the electrical connection path of the first system single chip and the second system single chip is shorter, data can be transmitted at a high speed, and the communication efficiency is higher. 本发明公开一种半导体装置，包括：第一层结构；第二层结构；桥接晶粒，设置于该第一层结构与该第二层结构之间；第一系统单芯片，设置在该第二层结构上；以及第二系统单芯片，设置于该第二层结构上；其中，该第一系统单芯片与该第二系统单芯片通过该桥接晶粒电连接。本发明中第一系统单芯片与第二系统单芯片可通过桥接晶粒电性连接，这样第一系统单芯片与第二系统单芯片的电性连接路径更短，并且可以高速传输资料，具有更高的通讯效率。