Chip delamination method based on etching technology
The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, a...
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creator | TAO ZIMU SHANG YUE XU SHANG DENG RUIQING |
description | The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor |
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The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor</description><language>chi ; eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231124&DB=EPODOC&CC=CN&NR=117116756A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231124&DB=EPODOC&CC=CN&NR=117116756A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAO ZIMU</creatorcontrib><creatorcontrib>SHANG YUE</creatorcontrib><creatorcontrib>XU SHANG</creatorcontrib><creatorcontrib>DENG RUIQING</creatorcontrib><title>Chip delamination method based on etching technology</title><description>The invention relates to a chip layer removing method based on an etching technology. 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The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
title | Chip delamination method based on etching technology |
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