Chip delamination method based on etching technology

The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAO ZIMU, SHANG YUE, XU SHANG, DENG RUIQING
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TAO ZIMU
SHANG YUE
XU SHANG
DENG RUIQING
description The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117116756A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117116756A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117116756A3</originalsourceid><addsrcrecordid>eNrjZDBxzsgsUEhJzUnMzcxLLMnMz1PITS3JyE9RSEosTk1RAPJTS5IzMvPSFUpSkzPy8nPy0yt5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hobmhoZm5qZmjMTFqAC7ILNU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chip delamination method based on etching technology</title><source>esp@cenet</source><creator>TAO ZIMU ; SHANG YUE ; XU SHANG ; DENG RUIQING</creator><creatorcontrib>TAO ZIMU ; SHANG YUE ; XU SHANG ; DENG RUIQING</creatorcontrib><description>The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor</description><language>chi ; eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231124&amp;DB=EPODOC&amp;CC=CN&amp;NR=117116756A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231124&amp;DB=EPODOC&amp;CC=CN&amp;NR=117116756A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAO ZIMU</creatorcontrib><creatorcontrib>SHANG YUE</creatorcontrib><creatorcontrib>XU SHANG</creatorcontrib><creatorcontrib>DENG RUIQING</creatorcontrib><title>Chip delamination method based on etching technology</title><description>The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBxzsgsUEhJzUnMzcxLLMnMz1PITS3JyE9RSEosTk1RAPJTS5IzMvPSFUpSkzPy8nPy0yt5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hobmhoZm5qZmjMTFqAC7ILNU</recordid><startdate>20231124</startdate><enddate>20231124</enddate><creator>TAO ZIMU</creator><creator>SHANG YUE</creator><creator>XU SHANG</creator><creator>DENG RUIQING</creator><scope>EVB</scope></search><sort><creationdate>20231124</creationdate><title>Chip delamination method based on etching technology</title><author>TAO ZIMU ; SHANG YUE ; XU SHANG ; DENG RUIQING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117116756A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAO ZIMU</creatorcontrib><creatorcontrib>SHANG YUE</creatorcontrib><creatorcontrib>XU SHANG</creatorcontrib><creatorcontrib>DENG RUIQING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAO ZIMU</au><au>SHANG YUE</au><au>XU SHANG</au><au>DENG RUIQING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chip delamination method based on etching technology</title><date>2023-11-24</date><risdate>2023</risdate><abstract>The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN117116756A
source esp@cenet
subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
title Chip delamination method based on etching technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T09%3A07%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAO%20ZIMU&rft.date=2023-11-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN117116756A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true