Chip delamination method based on etching technology

The invention relates to a chip layer removing method based on an etching technology. The method comprises the following steps: S0, preparing etching solutions with different formulas; the method comprises the following steps: S1, placing a chip to be subjected to layer removal on a storage frame, and then placing the storage frame into an etching groove; s2, connecting a turbulent flow pipe into the side wall of the etching tank, and adding etching liquid into the etching tank; s3, a small electric telescopic rod is started to drive the interior of a turbulent flow pipe to generate turbulent flow, and bubbles are generated by means of a foaming agent in the etching liquid; s4, observing an etching result by using a microscope until the surface of the chip is completely etched to form a polycrystalline layer, and recording the etching time, in the delaminating method, the hydrofluoric acid corrodes a passivation layer, namely a glass ceramic material, the hydrochloric acid corrodes a metal layer, the phosphor