Process simulation method of three-dimensional chip and related equipment

The invention discloses a process simulation method of a three-dimensional chip and related equipment, relates to the technical field of chips, and can solve the problems that an existing three-dimensional chip is long in test evaluation period and high in test cost. The process simulation method of the three-dimensional chip comprises the following steps: generating a first chip unit by using a first process parameter to obtain a first temperature stress parameter; generating a second chip unit stacked with the first chip unit by using a second process parameter to obtain a second temperature stress parameter; and obtaining a process simulation model of the three-dimensional chip based on the first chip unit, the second chip unit, the first temperature stress parameter and the second temperature stress parameter. 本申请公开一种三维芯片的工艺仿真方法及相关设备，涉及芯片技术领域，能够解决现有三维芯片测试评估周期长且试验成本高的问题。三维芯片的工艺仿真方法，包括：利用第一工艺参数生成第一芯片单元，得到第一温度应力参数；以及利用第二工艺参数生成与所述第一芯片单元层叠的第二芯片单元，得到第二温度应力参数；基于所述第一芯片单元、所述第二芯片单元、所述第一温度应力参数以及所述第二温度应力参数，得到所述三维芯片的工