New technology for enhancing interface bonding force of TaN film

The invention relates to the technical field of electronic component manufacturing, in particular to a technology for manufacturing a TaN thin film with strong binding force on an Al2O3 substrate in a room temperature state through sputtering. The method for enhancing the interface bonding force of the TaN thin film comprises the following steps: S1, cleaning an Al2O3 substrate by a wet method; s2, loading an Al2O3 substrate in vacuum; s3, sputtering target smelting: turning on a direct-current sputtering power supply, gradually increasing the power, and smelting the target for 1-2 minutes when the power is 100W, 200W and 300W respectively; s4, in the first 30-60 seconds of the beginning of sputtering, Ar gas is adopted as working gas, and the surface of the Al2O3 substrate is bombarded by using sputtered Ta particles, so that a bonding layer with the thickness of 5-10 nm can be formed at the film-substrate interface; and S5, after the bonding layer is formed, N2 gas is added, and the sputtering gas pressure