Circuit for actively inhibiting turn-off voltage peak and oscillation of SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

The invention discloses a circuit for actively inhibiting turn-off voltage peak and oscillation of a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and relates to the technical field of power electronics and electricians. The circuit is composed of a voltage detection and pulse generation circuit and a buffer circuit, by detecting changes of gate-source voltage and drain-source voltage in the turn-off process of the SiC MOSFET, the stages of turn-off voltage overshoot and oscillation are accurately recognized, then a control signal of a controllable switch in the buffer circuit is generated, the working time range of the buffer circuit is accurately controlled, and the switching-off time of the SiC MOSFET is prolonged. When the drain-source voltage is higher than the bus voltage, the buffer capacitor is connected to the circuit, at the moment, the buffer capacitor is connected to the drain end and the source end of the SiC MOSFET in parallel, the drain-source voltage is clamped near the bus v