Light emitting diode and preparation method thereof

The invention discloses a light-emitting diode and a preparation method thereof, the light-emitting diode comprises a semiconductor stacking layer, a first insulating layer and a reflection structure which are arranged in sequence, and the first insulating layer is provided with a first opening extending to the semiconductor stacking layer; the reflection structure comprises a first adhesion layer, a second adhesion layer and a first reflection layer which are arranged in sequence, and the first adhesion layer is of a patterned structure, is discontinuously arranged on the first insulation layer and at least fills the first opening; the second adhesive layer is located on the patterned first adhesive layer. The first opening is filled with the first adhesion layer, the second adhesion layer is located on the first adhesion layer, the first reflection layer can be directly or indirectly connected with the semiconductor stacking layer below the first opening through the first adhesion layer, and the first refle