Semiconductor device
A semiconductor device includes a first transistor, a second transistor, and at least one body region contact hole. The first transistor includes a first drain and a first gate. The second transistor includes a second drain and a second gate. The first transistor and the second transistor have a com...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor device includes a first transistor, a second transistor, and at least one body region contact hole. The first transistor includes a first drain and a first gate. The second transistor includes a second drain and a second gate. The first transistor and the second transistor have a common active area, the first transistor and the second transistor have a common source electrode, and the source electrode is arranged between the first grid electrode and the second grid electrode and corresponds to at least one source electrode contact hole. The at least one body region contact hole is arranged between the first grid electrode and the second grid electrode and is adjacent to the at least one source electrode contact hole, and the potential of the at least one source electrode contact hole is the same as that of the at least one body region contact hole. Electrical isolation is achieved through the shared source and the potential of the source contact hole is configured to be the same as the potenti |
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