Preparation method of semiconductor element
The invention provides a preparation method of a semiconductor element. First, a first isolation layer having a conductive contact is formed on a substrate, and a second isolation layer having an opening is formed on the first isolation layer, where the opening corresponds to and exposes an upper su...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a preparation method of a semiconductor element. First, a first isolation layer having a conductive contact is formed on a substrate, and a second isolation layer having an opening is formed on the first isolation layer, where the opening corresponds to and exposes an upper surface of the conductive contact. A conductive line structure is formed in the opening with a contact hole formed between the second isolation layer and the conductive line structure, and then a plasma oxide layer is conformally deposited on the substrate. Then, a wet cleaning process is performed by using an aqueous solution containing a plurality of negatively charged ions. A cap layer is formed over the plasma oxide layer, the cap layer filling the contact hole, and an etch-back process is performed to remove the cap layer over the contact hole.
本公开提供一种半导体元件的制备方法。首先,具有一导电接触点的一第一隔离层形成在一基底上,以及具有一开口的一第二隔离层形成在该第一隔离层上,其中该开口对应且暴露该导电接触点的一上表面。一导电线结构形成在该开口中,其中一接触孔形成在该第二隔离层与该导电线结构之间,然后一等离子体氧化物层共形地沉积在该基底上。然后,通过使用包含多个带负电荷离子的 |
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