Atomic layer deposition process method

The invention discloses an atomic layer deposition process method. The atomic layer deposition process method comprises the following steps: switching valves for the first time: switching a first valve into an open state, and switching a second valve into a closed state. The first process gas is introduced, and the first process gas is continuously introduced through the first gas inlet channel. And in the first cleaning and blowing process, inert shielding gas is continuously introduced through a third gas inlet channel. And second valve switching: switching the first valve to a closed state and switching the second valve to an open state. And the second process gas is introduced, and the second process gas is continuously introduced through a second gas inlet channel. And in the second cleaning and blowing process, inert shielding gas is continuously introduced through a third gas inlet channel. In this way, dust generated in the atomic layer deposition equipment can be reduced, and pipeline blockage and eq