Atomic layer deposition apparatus
The invention discloses atomic layer deposition equipment. The atomic layer deposition equipment comprises a negative pressure pump and a process cavity. The negative pressure pump is communicated with the process cavity through the first airflow pipeline and the second airflow pipeline. The first a...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses atomic layer deposition equipment. The atomic layer deposition equipment comprises a negative pressure pump and a process cavity. The negative pressure pump is communicated with the process cavity through the first airflow pipeline and the second airflow pipeline. The first airflow pipeline and the second airflow pipeline are provided with a first valve and a second valve respectively, and at least one of the first airflow pipeline and the second airflow pipeline is provided with a cold trap in series. The process cavity is further provided with a first gas inlet channel, a second gas inlet channel and a third gas inlet channel which are used for allowing first process gas, second process gas and inert shielding gas to enter the process cavity. In this way, dust generated in the atomic layer deposition equipment can be reduced, and pipeline blockage and equipment damage are reduced.
本申请公开了一种原子层沉积设备。原子层沉积设备包括负压泵和工艺腔体。负压泵通过第一气流管路和第二气流管路分别与工艺腔体连通。第一气流管路和第二气流管路分别设置有第一阀门和第二阀门,并且第一气流管路和第二气流管 |
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