Chamber architecture for epitaxial deposition and advanced epitaxial film applications

The present disclosure generally relates to a process chamber for processing a semiconductor substrate. The process chamber includes: an upper lamp assembly; a lower lamp assembly; a substrate support; an upper window disposed between the substrate support and the upper lamp assembly; a lower window disposed between the lower lamp assembly and the substrate support; an injection ring; and a base ring. Each of the upper lamp assembly and the lower lamp assembly includes a vertically oriented lamp hole for placing a heating lamp in the lamp hole. The injection ring includes a gas injector disposed through the injection ring, and the base ring includes a substrate transfer channel, a lower chamber exhaust channel, and one or more upper chamber exhaust channels. The gas injectors are disposed over the substrate transfer channel and opposite the lower chamber exhaust channel and the one or more upper chamber exhaust channels. 本公开内容大致与用于处理半导体基板的工艺腔室相关。该工艺腔室包括：上部灯组件；下部灯组件；基板支撑件；上部窗口，设置在该基板支撑件与该上部灯组件之间；下部窗口，设置在该下部灯组件