Method for transferring circuit pattern by utilizing photoetching technology
The invention discloses a method for transferring a circuit pattern by utilizing a photoetching technology, which comprises the following steps of: transferring a first part of circuit pattern to a substrate through photoetching, and depositing a circuit on the first part of circuit pattern to obtai...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for transferring a circuit pattern by utilizing a photoetching technology, which comprises the following steps of: transferring a first part of circuit pattern to a substrate through photoetching, and depositing a circuit on the first part of circuit pattern to obtain a first part of circuit; and depositing a second part of circuit on the substrate with the first part of circuit by using a positive photoresist process or a negative photoresist process to realize lap joint conduction between the second part of circuit and the first part of circuit. Compared with the existing alignment scheme, the photoetching pattern transfer method provided by the invention is simple and easy to operate, controllable in parameter, capable of ensuring the success rate and capable of saving the cost. The circuit manufactured by the method provided by the invention is clear in line, smooth in edge, smooth in conduction and standard in line width.
本发明公开了一种利用光刻技术转移电路图形的方法,包括:将第一部分电路图形通过光刻转移到衬底上,将电路 |
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