Silicon wafer photoetching alarm improvement method

The silicon wafer photoetching alarm improvement method comprises the steps of (1) changing a back sealing structure of a substrate slice into Sub-> LTO-> POLY, enabling the POLY to be located at the outermost end of a wafer, adsorbing chamber/external impurities, effectively preventing adhesion of Si and avoiding local unevenness of the edge, and (2) adding a base, enabling intrinsic silicon to grow on the surface of the base, enabling the POLY of the base to absorb redundant atmosphere of the chamber, protecting the edge area of the back face of the wafer and effectively preventing adhesion of Si. 本发明硅片光刻报警改善方法，包括：1）改变衬底片背封结构为Sub→LTO→POLY；POLY处于wafer最外端，吸附chamber/外界杂质，有效防止生成Si的附着，避免边缘的局部不平整；2）增加基座，将本征硅生长于基座表面，基座的POLY会吸收chamber多余气氛，保护wafer背面边缘区域，有效防止生成Si的附着。