Circuit and device for accelerating recovery of aging of integrated circuit
The invention provides a circuit and device for accelerating recovery of aging of an integrated circuit, and the circuit comprises the integrated circuit, and also comprises a PMOS tube P1, a PMOS tube P2, a PMOS tube P3, a PMOS tube P4, an NMOS tube N1, an NMOS tube N2, an NMOS tube N3, and an NMOS...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention provides a circuit and device for accelerating recovery of aging of an integrated circuit, and the circuit comprises the integrated circuit, and also comprises a PMOS tube P1, a PMOS tube P2, a PMOS tube P3, a PMOS tube P4, an NMOS tube N1, an NMOS tube N2, an NMOS tube N3, and an NMOS tube N4. The circuit further comprises a control end, the control end is electrically connected with grid electrodes of the PMOS tube P1, the PMOS tube P2, the PMOS tube P3, the PMOS tube P4, the NMOS tube N1, the NMOS tube N2, the NMOS tube N3 and the NMOS tube N4, and the working state of the integrated circuit is adjusted by controlling on-off of the MOS tubes. The circuit provided by the invention can effectively accelerate the recovery of two kinds of aging of the integrated circuit, thereby relieving the performance degradation of the integrated circuit caused by load aging.
本发明提供了一种加速恢复集成电路老化的电路及装置,包括:集成电路,还包括PMOS管P1、PMOS管P2、PMOS管P3、PMOS管P4、NMOS管N1、NMOS管N2、NMOS管N3以及NMOS管N4;还包括控制端,所述控制端分别与PMOS管P1、PMOS管P2、PMO |
---|