Integrated assembly and method of forming integrated assembly

Some embodiments include an integrated assembly having a memory region and another region adjacent to the memory region. A channel material pillar is disposed within the memory region and a conductive pillar is disposed within the other region. A source structure is coupled to a lower region of the channel material pillar. A panel extends across the memory region and the other region and separates the first memory block region from the second memory block region. A doped semiconductor material is proximate to the panel within the memory region and the other region. A ring laterally surrounds a lower region of the conductive pillar. The ring is between the conductive pillar and the doped semiconductor material. The ring comprises a laminate of two or more materials, wherein at least one of the two or more materials is insulated. Some embodiments include methods of forming an integrated assembly. 一些实施例包含一种集成组合件，其具有存储器区和邻近于所述存储器区的另一区。沟道材料柱布置在所述存储器区内，且导电柱布置在所述另一区内。源极结构耦合到所述沟道材料柱的下部区。面板跨越所述存储器区和所述另一区延伸，且将第一存储器块区与第