Silicon column enhanced silicon-based two-dimensional material charge coupling photoelectric detector
The invention discloses a silicon column enhanced silicon-based two-dimensional material charge coupling photoelectric detector, which comprises a silicon substrate, the surface of the silicon substrate is etched to form a silicon column enhanced region, an insulating oxide layer grows on the silico...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention discloses a silicon column enhanced silicon-based two-dimensional material charge coupling photoelectric detector, which comprises a silicon substrate, the surface of the silicon substrate is etched to form a silicon column enhanced region, an insulating oxide layer grows on the silicon column enhanced region, a two-dimensional material film is horizontally arranged on the silicon column enhanced region to serve as a readout layer, two ends of the readout layer are provided with a source electrode and a drain electrode, and the lower surface of the silicon substrate is provided with multiple layers of graphene. A heterojunction can be formed with the substrate, so that absorption of an infrared band is enhanced, and a back gate is arranged at the bottommost part. After light is incident, the light is reflected and superposed for multiple times between the silicon columns, plasmon resonance is generated, absorption and response to the light are enhanced, the oxidation layer can reduce reflection |
---|