Semiconductor aging test method and system

The invention discloses a semiconductor aging test method. The method comprises the following steps: acquiring electrical performance parameters of a semiconductor device at different time points; acquiring environmental parameters during a test period; the electrical performance parameters and the environmental parameters are stored in a database, and screening indexes are formulated; traversing an information database of the semiconductor device according to the screening index to perform feature extraction, obtaining a screening information database of the semiconductor device, and obtaining an aging performance test parameter set of the semiconductor device; a semiconductor aging degree comprehensive evaluation model is obtained in advance; using known historical data to train and verify the semiconductor aging degree comprehensive evaluation model; the verified model is applied to real test data, and the current aging degree of the semiconductor device is predicted; and evaluating the aging degree of the