Isostatic pressing graphite continuous high-temperature equipment for third-generation semiconductors
The invention discloses isostatic pressing graphite continuous high-temperature equipment for a third-generation semiconductor, and relates to the technical field of semiconductor material processing. The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under...
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| creator | JI BIN WAN WEIGUANG FENG YUCHI |
| description | The invention discloses isostatic pressing graphite continuous high-temperature equipment for a third-generation semiconductor, and relates to the technical field of semiconductor material processing. The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under the action of the transmission mechanism through the operation of the driving part; through the operation of the transmission mechanism, the graphite crucible is driven to continuously swing back and forth under the action of the sliding component. The graphite crucible has the advantages that silicon carbide powder can be stirred and mixed through forward and reverse rotation, the silicon carbide powder can be swung, shaken and vertically lifted and overturned, so that the silicon carbide powder rapidly flows and can be in full contact with heat, the heating quality is guaranteed, the heat flowing speed outside the graphite crucible can be increased, and the heating efficiency is improved. According to the graphi |
| format | Patent |
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The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under the action of the transmission mechanism through the operation of the driving part; through the operation of the transmission mechanism, the graphite crucible is driven to continuously swing back and forth under the action of the sliding component. The graphite crucible has the advantages that silicon carbide powder can be stirred and mixed through forward and reverse rotation, the silicon carbide powder can be swung, shaken and vertically lifted and overturned, so that the silicon carbide powder rapidly flows and can be in full contact with heat, the heating quality is guaranteed, the heat flowing speed outside the graphite crucible can be increased, and the heating efficiency is improved. 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The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under the action of the transmission mechanism through the operation of the driving part; through the operation of the transmission mechanism, the graphite crucible is driven to continuously swing back and forth under the action of the sliding component. The graphite crucible has the advantages that silicon carbide powder can be stirred and mixed through forward and reverse rotation, the silicon carbide powder can be swung, shaken and vertically lifted and overturned, so that the silicon carbide powder rapidly flows and can be in full contact with heat, the heating quality is guaranteed, the heat flowing speed outside the graphite crucible can be increased, and the heating efficiency is improved. 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The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under the action of the transmission mechanism through the operation of the driving part; through the operation of the transmission mechanism, the graphite crucible is driven to continuously swing back and forth under the action of the sliding component. The graphite crucible has the advantages that silicon carbide powder can be stirred and mixed through forward and reverse rotation, the silicon carbide powder can be swung, shaken and vertically lifted and overturned, so that the silicon carbide powder rapidly flows and can be in full contact with heat, the heating quality is guaranteed, the heat flowing speed outside the graphite crucible can be increased, and the heating efficiency is improved. According to the graphi</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Isostatic pressing graphite continuous high-temperature equipment for third-generation semiconductors |
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