Isostatic pressing graphite continuous high-temperature equipment for third-generation semiconductors

The invention discloses isostatic pressing graphite continuous high-temperature equipment for a third-generation semiconductor, and relates to the technical field of semiconductor material processing. The graphite crucible and the stirring piece are driven to synchronously and reversely rotate under the action of the transmission mechanism through the operation of the driving part; through the operation of the transmission mechanism, the graphite crucible is driven to continuously swing back and forth under the action of the sliding component. The graphite crucible has the advantages that silicon carbide powder can be stirred and mixed through forward and reverse rotation, the silicon carbide powder can be swung, shaken and vertically lifted and overturned, so that the silicon carbide powder rapidly flows and can be in full contact with heat, the heating quality is guaranteed, the heat flowing speed outside the graphite crucible can be increased, and the heating efficiency is improved. According to the graphi