Aluminum zinc oxide target material with high oxygen vacancy concentration and preparation method thereof

The invention belongs to the technical field of semiconductors, and discloses a preparation method of an aluminum zinc oxide target material with high oxygen vacancy concentration, which comprises the following steps: in a vacuum environment, putting an aluminum zinc oxide precursor and titanium pow...

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Bibliographische Detailangaben
Hauptverfasser: LUO SISHI, LI KAIJIE, SHAO XUELIANG, GU DESHENG, ZHANG XINGYU
Format: Patent
Sprache:chi ; eng
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