Aluminum zinc oxide target material with high oxygen vacancy concentration and preparation method thereof

The invention belongs to the technical field of semiconductors, and discloses a preparation method of an aluminum zinc oxide target material with high oxygen vacancy concentration, which comprises the following steps: in a vacuum environment, putting an aluminum zinc oxide precursor and titanium pow...

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Bibliographische Detailangaben
Hauptverfasser: LUO SISHI, LI KAIJIE, SHAO XUELIANG, GU DESHENG, ZHANG XINGYU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the technical field of semiconductors, and discloses a preparation method of an aluminum zinc oxide target material with high oxygen vacancy concentration, which comprises the following steps: in a vacuum environment, putting an aluminum zinc oxide precursor and titanium powder in the same environment without mutual contact, and sintering according to a gradient heating method to obtain the aluminum zinc oxide target material, the gradient heating method comprises the following steps: heating at a speed of 0.5-1.5 DEG C/min, and preserving heat for 0.5-1.5 hours at three stages of 1000 DEG C +/-20 DEG C, 1100 DEG C +/-20 DEG C and 1200 DEG C +/-20 DEG C respectively; when the temperature is raised to 1200-1350 DEG C, heat preservation is conducted for 10-12 h; and then the temperature is reduced at the speed of 0.1-0.5 DEG C/min. According to the method, titanium is adopted to absorb oxygen, the oxygen vacancy of the zinc aluminum oxide target material is improved under the vacuum con