Storage array and preparation method thereof

The invention discloses a storage array and a preparation method, which can improve the storage density. The storage array comprises a plurality of storage units, each storage unit comprises a through hole structure, a first conductive structure, a first dielectric layer, a first conductor layer, a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN HUAWEI, FAN RENSHI, FANG YICHEN, DING SHICHENG, BU SITONG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a storage array and a preparation method, which can improve the storage density. The storage array comprises a plurality of storage units, each storage unit comprises a through hole structure, a first conductive structure, a first dielectric layer, a first conductor layer, a second conductor layer and a third conductor layer, the second conductor layer and the third conductor layer are insulated from each other, and the through hole structure penetrates through the second conductor layer and/or the third conductor layer; the through hole structure comprises a second conductive structure, a first semiconductor layer, a second semiconductor layer and a second dielectric layer, the first semiconductor layer, the second semiconductor layer and the second conductive structure are arranged in the side wall direction of the through hole structure, and the second dielectric layer is located between the second semiconductor layer and the second conductive structure; the first conductive structu