Memory element and manufacturing method thereof

The invention provides a memory element and a manufacturing method thereof. The memory element may be applied to a three-dimensional AND flash memory element. The memory element includes a gate stack structure, a channel pillar, a plurality of conductor pillars and a charge storage structure. The gate stack structure is over the dielectric substrate. The grid stacking structure comprises a plurality of grid layers and a plurality of insulating layers which are alternately stacked. The channel pillar extends through the gate stack structure. Each conductor column comprises a main body part and an extension part. And the main body part extends to pass through the grid stacking structure and is electrically connected with the channel column. And the extension part is arranged below the main body part, is connected with the main body part and is electrically isolated from the channel column. And the charge storage structure is positioned between the channel column and the plurality of gate layers. 本发明提供了一种存储器元件及其