Diamond-based gallium nitride transistor preparation method and diamond-based gallium nitride transistor
The invention is suitable for the technical field of semiconductor devices, and provides a diamond-based gallium nitride transistor preparation method and a diamond-based gallium nitride transistor, and the method comprises the steps: preparing an electrode field plate region on the upper surface of...
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| creator | CUI YUXING ZHOU GUO LIAO LONGZHONG QIN LONG SONG HONGWEI ZHANG LIJIANG FU XINGZHONG WU YICHANG SONG JIEJING FENG LIDONG |
| description | The invention is suitable for the technical field of semiconductor devices, and provides a diamond-based gallium nitride transistor preparation method and a diamond-based gallium nitride transistor, and the method comprises the steps: preparing an electrode field plate region on the upper surface of a silicon-based gallium nitride wafer; sputtering a first metal layer on the upper surface of the silicon-based gallium nitride wafer and the upper surface of the silicon wafer, and performing pre-bonding; carrying out temporary bonding on the carrier and the silicon wafer; removing a silicon substrate of the silicon-based gallium nitride wafer to obtain a gallium nitride epitaxial layer supported by the silicon wafer, and sputtering a second metal layer or depositing a dielectric layer on the lower surface of the gallium nitride epitaxial layer and the upper surface of the diamond for bonding; removing the carrier, the silicon wafer and the first metal layer to obtain a diamond-based gallium nitride wafer; and pe |
| format | Patent |
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sputtering a first metal layer on the upper surface of the silicon-based gallium nitride wafer and the upper surface of the silicon wafer, and performing pre-bonding; carrying out temporary bonding on the carrier and the silicon wafer; removing a silicon substrate of the silicon-based gallium nitride wafer to obtain a gallium nitride epitaxial layer supported by the silicon wafer, and sputtering a second metal layer or depositing a dielectric layer on the lower surface of the gallium nitride epitaxial layer and the upper surface of the diamond for bonding; removing the carrier, the silicon wafer and the first metal layer to obtain a diamond-based gallium nitride wafer; and pe</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEOwjAMQNEsDAi4gzlAhwqpLSMqICYm9spgQy0ldpSY-7NwgE5_eX8d5rNgMqXmiZUJPhijfBOoeBFi8IJapboVyIUzFnQxhcQ-GwEqAS38t2H1xlh59-8m7K-Xx3hrONvENeOLlX0a723bHfuhH7rTYYn5AXiaQWg</recordid><startdate>20231031</startdate><enddate>20231031</enddate><creator>CUI YUXING</creator><creator>ZHOU GUO</creator><creator>LIAO LONGZHONG</creator><creator>QIN LONG</creator><creator>SONG HONGWEI</creator><creator>ZHANG LIJIANG</creator><creator>FU XINGZHONG</creator><creator>WU YICHANG</creator><creator>SONG JIEJING</creator><creator>FENG LIDONG</creator><scope>EVB</scope></search><sort><creationdate>20231031</creationdate><title>Diamond-based gallium nitride transistor preparation method and diamond-based gallium nitride transistor</title><author>CUI YUXING ; 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sputtering a first metal layer on the upper surface of the silicon-based gallium nitride wafer and the upper surface of the silicon wafer, and performing pre-bonding; carrying out temporary bonding on the carrier and the silicon wafer; removing a silicon substrate of the silicon-based gallium nitride wafer to obtain a gallium nitride epitaxial layer supported by the silicon wafer, and sputtering a second metal layer or depositing a dielectric layer on the lower surface of the gallium nitride epitaxial layer and the upper surface of the diamond for bonding; removing the carrier, the silicon wafer and the first metal layer to obtain a diamond-based gallium nitride wafer; and pe</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Diamond-based gallium nitride transistor preparation method and diamond-based gallium nitride transistor |
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