Mask device, manufacturing method of mask device and photoetching equipment

The invention relates to the field of photoetching, and discloses a mask device which comprises a transparent bottom plate with a phase shift area and a full transparent area which are arranged adjacently, the phase shift area is a phase shift unit with shading layers and phase shift layers, the shading layers are arranged on two sides of the phase shift layer, the distance between the shading layers is smaller than or equal to the width of the phase shift layer, and the full transparent area is arranged on the transparent bottom plate. The width of the phase shift layer is smaller than the sum of the width of the shading layers on the two sides and the gap of the shading layers, the interference effect of light rays penetrating through the two sides of the two shading layers on the light rays penetrating through the phase shift layer is the same, the width of the phase shift layer is 1-5 microns, the light transmittance is 10%-90%, and the sum of the widths of the shading layers is 1-8 microns. According to