IGBT (Insulated Gate Bipolar Translator) device, preparation method thereof and electronic device

The invention provides an IGBT device and a preparation method thereof, and an electronic device, and the device comprises a substrate which comprises a first region and a second region; the base region is located in the first region and the second region and extends into the substrate from the first surface of the substrate; the gate structure is located in the second region, extends into the substrate from the first surface of the substrate and penetrates through the base region in the second region; the source region is positioned in the base region in the second region and extends into the substrate from the first surface of the substrate; a memory region below the base region in the second region; the first injection region is located in the second region and extends into the substrate from the second surface of the substrate. According to the IGBT device, the preparation method thereof and the electronic device, the first region is not provided with a gate structure and a storage region, so that the car