Preparation method of enhanced AlGaN/GaN-based HEMT device

The invention provides a preparation method of an enhanced AlGaN/GaN-based HEMT device, and the method comprises the steps: forming an InGaN layer on an AlGaN/GaN heterojunction, taking the patterned InGaN layer as a mask to form a P-GaN layer, enabling the InGaN layer to be decomposed and an AlGaN...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG WENBO, KAI CUIHONG, ZOU PENGHUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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