Preparation method of enhanced AlGaN/GaN-based HEMT device

The invention provides a preparation method of an enhanced AlGaN/GaN-based HEMT device, and the method comprises the steps: forming an InGaN layer on an AlGaN/GaN heterojunction, taking the patterned InGaN layer as a mask to form a P-GaN layer, enabling the InGaN layer to be decomposed and an AlGaN barrier layer not to be decomposed through high-temperature annealing, removing the InGaN layer, enabling the AlGaN barrier layer to be exposed, enabling the thickness of the AlGaN barrier layer to be stably controlled, enabling the surface not to be subjected to ion bombardment, enabling the surface not to be damaged by etching, and enabling the AlGaN barrier layer to be not damaged by ion bombardment and not to be damaged by etching. Therefore, the method is beneficial to improving the reliability of the prepared enhanced HEMT GaN device. 本发明提供一种增强型AlGaN/GaN基HEMT器件的制备方法，在AlGaN/GaN异质结上形成InGaN层，以图形化的InGaN层作为掩膜形成P-GaN层，通过高温退火使InGaN层分解而AlGaN势垒层不发生分解，以去除InGaN层显露AlGaN势垒层，使AlGaN势垒层厚度得到稳定控制，且表面不受离子轰击，无刻蚀损伤，从而该方法有利于提高制备的增