Bit line reading circuit, memory and electronic equipment

The invention provides a bit line reading circuit, a memory and electronic equipment. According to the bit line reading circuit, a bit line is connected with a ferroelectric storage unit, and the ferroelectric storage unit comprises n ferroelectric capacitors and transistors; the sensitive amplifier...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YIN SHIHUI, JING WEILIANG, JI BINGWU, WANG ZHENGBO, LIAO HENG, BU SITONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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