Bit line reading circuit, memory and electronic equipment

The invention provides a bit line reading circuit, a memory and electronic equipment. According to the bit line reading circuit, a bit line is connected with a ferroelectric storage unit, and the ferroelectric storage unit comprises n ferroelectric capacitors and transistors; the sensitive amplifier...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YIN SHIHUI, JING WEILIANG, JI BINGWU, WANG ZHENGBO, LIAO HENG, BU SITONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The invention provides a bit line reading circuit, a memory and electronic equipment. According to the bit line reading circuit, a bit line is connected with a ferroelectric storage unit, and the ferroelectric storage unit comprises n ferroelectric capacitors and transistors; the sensitive amplifier and the pre-charging circuit are respectively connected with the bit line and the reference line, the first switch is connected to the bit line between the sensitive amplifier and the pre-charging circuit, and the second switch is connected to the reference line between the sensitive amplifier and the pre-charging circuit. In a read-write stage, the sensitive amplifier works normally, the first switch enables the bit line between the sensitive amplifier and the pre-charging circuit to be disconnected, and the second switch enables the reference line between the sensitive amplifier and the pre-charging circuit to be disconnected, so that the bit line can be pulled by the pre-charging circuit to the voltage the same